Radio-Frequency Reflectometry in Silicon-Based Quantum Dots

نویسندگان

چکیده

RF reflectometry offers a fast and sensitive method for charge sensing spin readout in gated quantum dots. We focus this work on the implementation of accumulation-mode gate-defined dots, where large parasitic capacitance poses challenge. describe test two methods mitigating effect capacitance, one by on-chip modifications second off-chip changes. demonstrate that these enable high-performance Si/SiGe achieving fidelity 99.9% measurement time 1 $\mu$s.

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ژورنال

عنوان ژورنال: Physical review applied

سال: 2021

ISSN: ['2331-7043', '2331-7019']

DOI: https://doi.org/10.1103/physrevapplied.16.014057